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 NTGD1100L
8 V, 3.3 A, Load Switch with Level-Shift, P-Channel, TSOP-6
The NTGD1100L integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel, with an external resistor (R1), functions as a level-shift to drive the P-Channel. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF
Features http://onsemi.com
V(BR)DSS 8.0 V RDS(on) TYP 40 mW @ -4.5 V 55 mW @ -2.5 V 80 mW @ -1.8 V 3.3 A ID MAX
Power MOSFET
SIMPLIFIED SCHEMATIC
4 Q2 6 2,3
* * * * * * *
Extremely Low RDS(on) Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V ESD Rating of 3000 V Pb-Free Package is Available
Rating Symbol VIN VON/OFF IL PD ILM TJ, TSTG IS ESD TL Value 8.0 8.0 3.3 2.4 0.83 0.43 10 -55 to 150 -1.0 3.0 260 A C A kV C TZ M G W Unit V V A
5
Q1
1
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Input Voltage (VDSS, P-Ch) ON/OFF Voltage (VGS, N-Ch) Continuous Load Current Steady TA = 25C (Note 1) State TA = 85C Power Dissipation (Note 1) Pulsed Load Current Steady TA = 25C State TA = 85C tp = 10 ms
MARKING DIAGRAM & PIN ASSIGNMENT
D1/G2 6 1 TSOP-6 CASE 318G STYLE 11 1 S1 G1 5 TZ M G G 23 D2 D2 S2 4
Operating Junction and Storage Temperature Source Current (Body Diode) ESD Rating, MIL-STD-883D HBM (100 pF, 1.5 kW) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
= Specific Device Code = Date Code* = Pb-Free Package
(Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
THERMAL RESISTANCE RATINGS
Rating Junction-to-Ambient - Steady State (Note 1) Junction-to-Foot - Steady State (Note 1) Symbol RmJA RmJF Max 150 50 Unit C/W
ORDERING INFORMATION
Device NTGD1100LT1 NTGD1100LT1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTGD1100L/D
(c) Semiconductor Components Industries, LLC, 2007
March, 2007 - Rev. 6
1
NTGD1100L
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Q2 Drain-to-Source Breakdown Voltage Forward Leakage Current Q1 Gate-to-Source Leakage Current Q1 Diode Forward On-Voltage ON CHARACTERISTICS Voltage ON/OFF Q1 Gate Threshold Voltage Input Voltage Q2 Drain-to-Source On Resistance VON/OFF VGS1 VIN RDS(on) VGS1 = VDS1, ID = 50 mA VGS2 = VDS2, ID = 250 mA VON/OFF = 1.5 V, IL = 1.0 A VIN = 4.5 V VIN = 2.5 V VIN = 1.8 V Load Current IL VDROP 0.2 V, VIN = 5.0 V, VON/OFF = 1.5 V VDROP 0.2 V, VIN = 2.5 V, VON/OFF = 1.5 V VDROP 0.2 V, VIN = 1.8 V, VON/OFF = 1.5 V 1.0 1.0 1.0 1.5 0.6 1.8 40 55 80 8.0 1.2 8.0 55 70 140 A V V V mW VIN IFL IGSS VSD VGS2 = 0 V, ID2 = 250 mA VGS2 = 0 V, VDS2 = 8.0 V TJ = 25C TJ = 125C -0.7 8.0 1.0 10 100 -1.0 nA V V mA Symbol Test Condition Min Typ Max Unit
VDS1 = 0 V, VGS1 = 8.0 V IS = -1.0 A, VGS1 = 0 V
VIN R1
4 Q2 6
2,3 C1 6
VOUT
ON/OFF
5 Q1 1 R2
CO
LOAD
CI
R2
GND
Figure 1. Load Switch Application
Components R1 R2 C0 C1 Pullup Resistor
Description
Values Typical 10 kW to 1.0 MW Typical 0 to 100 kW Usually < 1.0 mF Typical 1000 pF
Optional Slew-Rate Control Output Capacitance Optional In-Rush Current Control
http://onsemi.com
2
NTGD1100L
TYPICAL CHARACTERISTICS
0.400 0.350 0.300 VDROP, (V) TJ = 125C TJ = 25C VDROP, (V) 0.250 0.200 0.150 0.100 0.050 0 0 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 IL, (A) 0.050 0 0.200 0.150 0.100 TJ = 125C TJ = 25C 0.300 0.250
0
0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 IL, (A)
Figure 2. VDROP vs. IL @ VIN = 2.5 V
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 3. VDROP vs. IL @ VIN = 4.5 V
0.50 0.48 0.46 0.44 0.42 0.40 0.38 0.36 0.34 0.32 0.30 0.28 0.26 0.24 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0
TJ = 125C TJ = 25C
IL = 1.0 A VON/OFF = 1.5 to 8.0 V
0
1.00
2.00
3.00
4.00 VIN, (V)
5.00
6.00
7.00
8.00
0.15 0.14 IL = 1.0 A 0.13 VON/OFF = 1.5 to 8.0 V 0.12 0.11 0.10 VIN = 1.8 V 0.09 0.08 0.07 0.06 VIN = 5.0 V 0.05 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75
100
125
150
TJ, JUNCTION TEMPERATURE (C)
Figure 4. On Resistance vs. Input Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.7 1.5 1.3 1.1 0.9 0.7 -50 IL = 1.0 A VON/OFF = 1.5 to 8.0 V
Figure 5. On Resistance Variation with Temperature
VIN = 5.0 V
VIN = 1.8 V
-25
0
25
50
75
100
125
150
TJ, TEMPERATURE JUNCTION (C)
Figure 6. Normalized On Resistance Variation with Temperature
http://onsemi.com
3
NTGD1100L
TYPICAL CHARACTERISTICS
60 55 50 45 40 35 30 25 20 15 10 5 0 IL = 1.0 A VON/OFF = 1.5 V C1 = 10 mF C0 = 1.0 mF td(off) TIME (mS) 60 55 50 45 40 35 30 25 20 15 10 5 0 tr td(on) 0 1 2 3 4 R2 (kW) 5 6 7 8 IL = 1.0 A VON/OFF = 3.0 V C1 = 10 mF C0 = 1.0 mF td(off)
TIME (mS)
tf
tf
tr td(on) 0 1 2 3 4 R2 (kW) 5 6 7 8
Figure 7. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW
40 35 30 TIME (mS) 25 20 15 10 5 0 0 1 2 3 4 R2 (kW) 5 6 7 8 IL = 1.0 A VON/OFF = 1.5 V C1 = 10 mF C0 = 1.0 mF tf td(off) td(on) tr TIME (mS) 30 25 20 15 10 5 0
Figure 8. Switching Variation R2 @ VIN = 4.5 V, R1 = 20 kW
tf
td(off) IL = 1.0 A VON/OFF = 3.0 V C1 = 10 mF C0 = 1.0 mF
tr td(on)
0
1
2
3
4 R2 (kW)
5
6
7
8
Figure 9. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW
RqJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
Figure 10. Switching Variation R2 @ VIN = 2.5 V, R1 = 20 kW
1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03
0.01 1E-03
SQUARE WAVE PULSE DURATION TIME, t (sec)
Figure 11. FET Thermal Response Normalized to RqJA at Steady State (1 inch Pad) http://onsemi.com
4
NTGD1100L
PACKAGE DIMENSIONS
TSOP-6 CASE 318G-02 ISSUE P
D
HE
6 1
5 2
4 3
E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10
b e c L q
0.05 (0.002) A1
A
STYLE 11: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1/GATE 2
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.075
0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
5
NTGD1100L/D


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